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Hall effect n-Ge carrier board Phywe

Art. nr: 65-1180201

10 383,75 kr

Produktbeskrivning

In connection with Halleffect-module for determination of temperature dependent Hall voltage and conductivity of nondoped semiconductors.

Equipment and technical data

Heatable carrier board with n-Ge-crystal, Pt100-Thermocouple, integrated heating and 4-mm-connection plugs.
Dimensions of crystal (mm): 20 x 10 x 1.
Spec. resistance: approx. 2.0-2.5 Ohm cm-
Max. crystal temperature: 170 °C.
Max. probe current: +/- 60 mA.
Dimensions of circuit board (mm): 73 x 70 x 3.
Weight: 0.03 kg